Observation of rapid field aided diffusion of silver in metal-oxide-semiconductor structures
- 1 October 1983
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 43 (7) , 653-654
- https://doi.org/10.1063/1.94472
Abstract
Fast electric field aided diffusion of silver in SiO2 has been observed for fields of 104 V/cm and temperatures as low as 275 °C. The diffusion coefficient of silver in SiO2 is estimated to be 10−13 cm2/s at 300 °C, with an activation energy of 1.24 eV. The consequences of Ag contamination in very large scale integrated metallization systems are discussed.Keywords
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