Cavity Polaritons in InGaN Microcavities at Room Temperature
- 25 June 2004
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 92 (25) , 256402
- https://doi.org/10.1103/physrevlett.92.256402
Abstract
Cavity polaritons are observed in InGaN quantum well (QW) microcavities at room temperature. High-quality microcavities are fabricated by the wafer-bonding of InGaN QW layers and dielectric distributed Bragg reflectors. The anticrossing behavior of strong exciton-photon coupling is confirmed by vacuum-field Rabi splitting obtained from reflection measurements. This strong coupling is also enhanced by increasing the integrated oscillator strength coupled to the cavity mode. The oscillator strength of InGaN QW excitons is 1 order of magnitude larger than that of GaAs QW excitons.Keywords
This publication has 26 references indexed in Scilit:
- Spontaneous Bose Coherence of Excitons and PolaritonsScience, 2002
- Condensation of Semiconductor Microcavity Exciton PolaritonsScience, 2002
- Room-temperature polariton lasers based on GaN microcavitiesApplied Physics Letters, 2002
- High-temperature ultrafast polariton parametric amplification in semiconductor microcavitiesNature, 2001
- Nonlinear Emission of Microcavity Polaritons in the Low Density RegimePhysical Review Letters, 1999
- Stimulation of Polariton Photoluminescence in Semiconductor MicrocavityPhysical Review Letters, 1998
- Nonequilibrium condensates and lasers without inversion: Exciton-polariton lasersPhysical Review A, 1996
- Quantum well excitons in semiconductor microcavities: Unified treatment of weak and strong coupling regimesSolid State Communications, 1995
- Room-temperature cavity polaritons in a semiconductor microcavityPhysical Review B, 1994
- Observation of the coupled exciton-photon mode splitting in a semiconductor quantum microcavityPhysical Review Letters, 1992