Comparison of 1200 V/50 A state-of-the-art half-bridge IGBT-modules and MCT
- 24 December 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- Vol. 1 (02759306) , 620-626
- https://doi.org/10.1109/pesc.1996.548645
Abstract
The paper shows a comparison of 1200 V/50 A state-of-the-art half-bridge IGBT-modules by various manufacturers. The static, dynamic and short circuit behaviour and the power losses of the IGBTs and the free-wheel diodes which were measured in a step-down converter circuit at the same test conditions are presented. The results are discussed with reference to the active chip areas (information of the firms). Moreover, these parameters are compared to the values of a 1000 V/65 A discrete P-MCT by Harris.Keywords
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