Absolute rate constants for the reactions of O(3P) atoms and OH radicals with SiH4 over the temperature range of 297–438°K

Publisher Website
Google Scholar
Abstract
Absolute rate constants for the reaction of SiH4 with O(3P) atoms and OH radicals have been determined over the temperature range 297°–438°K using flash photolysis–NO2 chemiluminescence and flash photolysis–resonance fluorescence techniques, respectively. The Arrhenius expressions obtained are where the error limits in the Arrhenius activation energies are the estimated overall error limits. Rate data for the reactions of SiH4, CH4, and H2S with O(3P), H, and F atoms and with OH, CH3, and CF3 radicals are compared, showing that H2S and SiH4, which have similar bond energies, have reasonably similar reactivities toward these atoms and radicals.