p - i - n f.e.t. hybrid optical receiver for 1.1–1.6 μm optical communication systems

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Abstract
The fabrication of low capacitance v.p.e. InGaAs/InP p-i-n photodiodes having a high responsivity up to 1.6 μm wavelength is described. The receiver sensitivities of the p-i-n f.e.t. hybrid receiver for a 280 Mbit/s system, measured at 1.3μm and 1.5 μm are −38.9 dBm and −39.4 dBm,respectively.