Oxidised GaAs QW vertical-cavity lasers with 40%power conversion efficiency
- 12 September 1996
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 32 (19) , 1784-1786
- https://doi.org/10.1049/el:19961216
Abstract
Using a solid source MBE and Be for p-type doping, the authors have fabricated 6 µm diameter multimode vertical-cavity lasers with GaAs quantum wells showing a 730 µA threshold current and a 8.5 mW output power. For the first time a maximum conversion efficiency > 40% is reported for GaAs based VCSELs. Singlemode devices exhibit a maximum output power of 1.2 mW and a sidemode suppression > 30 dB.Keywords
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