Avalanche multiplication factors in Ge and Si abrupt junctions
- 1 March 1974
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 21 (3) , 226-231
- https://doi.org/10.1109/t-ed.1974.17900
Abstract
Analytical approximations for the multiplication factors Mnand Mpin Ge and Si one-sided abrupt junctions are given. The resulting expressions account for different α and β ionization rates and are quite accurate. With further approximations on the ionization integrals, very simple expressions of 1 -- 1/M both for electron and holes in the range of very low multiplication are obtained, depending from a single ionization rate.Keywords
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