Quasi-Nondestructive Observation of Oxidation-Induced Stacking Faults in Silicon by Photoacoustic Topography
- 1 January 1984
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 23 (1A) , L1
- https://doi.org/10.1143/jjap.23.l1
Abstract
Oxidation-induced stacking faults (OSF) have been observed quasi-nondestructively by photoacoustic topography. Photoacoustic (PA) signals were detected with a ZnO transducer made by sputtering on the back surface of a sample. We found a good correlation between the PA topograph and the distribution of OSF. The spatial resolution was about 60 µm in the present PA topography.Keywords
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