Domain configuration under rotational flux and applied stress conditions in silicon-iron
- 1 June 1974
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Magnetics
- Vol. 10 (2) , 168-169
- https://doi.org/10.1109/tmag.1974.1058302
Abstract
No abstract availableThis publication has 2 references indexed in Scilit:
- Alternating and rotational power loss at 50 c/s in 3% silicon-iron sheetsProceedings of the Institution of Electrical Engineers, 1965
- The effect of stress on the domain structure of Goss textured silicon-ironBritish Journal of Applied Physics, 1964