X-band GaInP/GaAs power heterojunction bipolar transistor

Publisher Website

31 December 2002

proceedings article
Published by Institute of Electrical and Electronics Engineers (IEEE)

https://doi.org/10.1109/mwsym.1993.276861

Abstract

No abstract available

Keywords

This publication has 6 references indexed in Scilit:

2.5 W CW X-band heterojunction bipolar transistor
Published by Institute of Electrical and Electronics Engineers (IEEE) ,2003
12 W monolithic X-band HBT power amplifier
Published by Institute of Electrical and Electronics Engineers (IEEE) ,2003
Microwave performance of a self-aligned GaInP/GaAs heterojunction bipolar transistor
IEEE Electron Device Letters, 1993
Near-ideal I-V characteristics of GaInP/GaAs heterojunction bipolar transistors
IEEE Electron Device Letters, 1992
High speed non-selfaligned GaInP/GaAs-TEBT
Electronics Letters, 1992
Heterojunction bipolar transistor using a (Ga,In)P emitter on a GaAs base, grown by molecular beam epitaxy
IEEE Electron Device Letters, 1985