Thermophysical properties of low-residual stress, Silicon-rich, LPCVD silicon nitride films
- 30 April 1990
- journal article
- Published by Elsevier in Sensors and Actuators A: Physical
- Vol. 23 (1-3) , 856-860
- https://doi.org/10.1016/0924-4247(90)87046-l
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
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- Thermal conductivity of heavily doped low-pressure chemical vapor deposited polycrystalline silicon filmsJournal of Applied Physics, 1988
- Silicon nitride single-layer x-ray maskJournal of Vacuum Science and Technology, 1982
- Electrical trimming of heavily doped polycrystalline silicon resistorsIEEE Transactions on Electron Devices, 1979