28–51 GHz dynamic frequency divider based on 0.15 μm T-gate Al _0.2 Ga _0.8 As/In _0.25 Ga _0.75 As MODFETs

13 May 1993

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 29 (10) , 933-934
https://doi.org/10.1049/el:19930622

Abstract

The design and performance of a 28–51 GHz dynamic frequency divider based on pseudomorphic Al_0.2Ga_0.8As/In_0.25Ga_0.75As MODFETs with 0.15 μm mushroom-shaped gates are presented. The circuit has a power consumption of ∼440 mW and a chip area of ∼200 × 220 μm².

Keywords

28 TO 51 GHZ
T-GATE
440 MW
DYNAMIC FREQUENCY DIVIDER
MODFETS
0.15 MICRON
MUSHROOM-SHAPED GATES
POWER CONSUMPTION
PSEUDOMORPHIC DEVICES
AL0.2GA0.8AS-IN0.25GA0.75AS

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28–51 GHz dynamic frequency divider based on 0.15 μm T-gate Al 0.2 Ga 0.8 As/In 0.25 Ga 0.75 As MODFETs

Abstract

Keywords

28–51 GHz dynamic frequency divider based on 0.15 μm T-gate Al _0.2 Ga _0.8 As/In _0.25 Ga _0.75 As MODFETs