Continuous-Wave (CW) operation of GaInP-AlGaInP visible compressively strained multiple quantum-wire (CS-WQWR) lasers

This publication has 31 references indexed in Scilit:

• Effect of strain on the threshold current of GaInP/AlGaInP quantum well lasers emitting at 633 nm
  Published by Institute of Electrical and Electronics Engineers (IEEE) ,2005
• Low threshold current density operation of GaInP-AlGaInP visible multiple quantum wire-like lasers (MQWR-LDs) under the room temperature pulsed condition
  IEEE Photonics Technology Letters, 1995
• AlGaInP multiple quantum wire heterostructure lasers prepared by the strain-induced lateral-layer ordering process
  IEEE Journal of Quantum Electronics, 1994
• Oscillator strength enhancement for [110]-polarized light in compressively strained GaInP ordered crystals used in AlGaInP lasers
  Applied Physics Letters, 1993
• AlGaInP multiple-quantum-wire lasers grown by gas source molecular beam epitaxy
  Applied Physics Letters, 1993
• Observation of stripe-direction dependence of threshold current density for AlGaInP laser diodes with CuPt-type natural superlattice in Ga0.5In0.5P active layer
  Applied Physics Letters, 1992
• Formation of lateral quantum wells in vertical short-period superlattices by strain-induced lateral-layer ordering process
  Applied Physics Letters, 1992
• Low threshold, 633 nm, single tensile-strained quantum well Ga0.6In0.4P/(AlxGa1−x)0.5In0.5P laser
  Applied Physics Letters, 1992
• Low threshold current density (760 A/cm ² ) and high power (45 mW) operation of strained Ga _0.42 In _0.58 P multiquantum well laser diodes emitting at 632 nm
  Electronics Letters, 1992
• Theoretical Gain of Quantum-Well Wire Lasers
  Japanese Journal of Applied Physics, 1985