Metal-Semiconductor Transition in Heavily Doped n–Type Silicon
- 16 February 1975
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 27 (2) , K89-K91
- https://doi.org/10.1002/pssa.2210270254
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- Scattering of Electrons in Heavily Doped n-Type GermaniumJournal of the Physics Society Japan, 1971
- Semiconductor-to-Metal Transition in-Type Group IV SemiconductorsReviews of Modern Physics, 1968
- Electric Conduction in Phosphorus Doped Silicon at Low TemperaturesJournal of the Physics Society Japan, 1967
- ON THE TRANSITION TO METALLIC CONDUCTION IN SEMICONDUCTORSCanadian Journal of Physics, 1956