Anisotropy of high-temperature hardness in 6H silicon carbide
- 1 April 1986
- journal article
- research article
- Published by Springer Nature in Journal of Materials Science Letters
- Vol. 5 (4) , 450-452
- https://doi.org/10.1007/bf01672358
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Kinetics and Mechanisms of High-Temperature Creep in Silicon Carbide: I, Reaction-BondedJournal of the American Ceramic Society, 1984
- Motion of partial dislocation in silicon carbidePhysica Status Solidi (a), 1984
- Microhardness anisotropy of silicon carbideJournal of Materials Science, 1980
- Growth, morphology and slip system of ?-Si3N4 single crystalJournal of Materials Science, 1979
- Hardness Anisotropy of Single Crystals of IVa-DiboridesJapanese Journal of Applied Physics, 1973
- Anisotropy in the hardness of single crystalsProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1971
- Effect of Crystal Orientation on Hardness of Silicon CarbideJournal of the American Ceramic Society, 1964
- Dislocations in Silicon CarbideJournal of Applied Physics, 1960