An experimental and theoretical study of the local temperature rise of mirror facets in InGaAsP/GaAs and AlGaAs/GaAs SCH SQW laser diodes

Publisher Website
Google Scholar
Abstract
A photoluminescence study has been carried out of the local mirror facet temperature rise for InGaAsP/GaAs and AlGaAs/GaAs SCH SQW high power broad contact laser diodes. It is shown that the local optical temperature rise of mirror facets (ΔT m opt ) in conventional AlGaAs/GaAs SCH SQW laser diodes is nearly 5–10 times higher than that in InGaAsP/GaAs lasers operating under the same conditions. It has been established that ΔT m opt decreases with increasing waveguide width (d w ), and that for InGaAsP/GaAs diodes with d w =0.8 μm, ΔT m opt may be not in excess of 5° for uncoated facet diodes with a 100 μm aperture for output power of 1 W. Calculations have shown that the surface recombination model cannot account for the experimental data on mirror facet overheating in lasers with a single quantum well active region. To explain these results, one has to assume the existence in the active region of a near‐facet dead layer of finite thickness with an enhanced nonradiative recombination rate. Broad waveguide lasers characterized by a low local mirror facet temperature rise represent the most promising modification of laser diodes permitting one to increase their maximum output power density.

This publication has 0 references indexed in Scilit: