Relaxation of dielectric thin films under Ar+ laser irradiation

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Abstract
Ar+ laser irradiation can produce change, most of the time decrease, in optical absorption of various electron beam deposited (EBD) dielectric thin films. Similar phenomena were also found in bulk materials prepared under high pressure and high temperature conditions. In this paper we report our recent progress in understanding the problem by employing a relaxation function which can fit the in-situ measured time dependent change in absorption of various dielectric thin films. Results of SiO2, TiO2, Ta2O5, ZrO2, HfO2 films and SiO2 bulk samples were reported and compared.

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