Si epitaxy by molecular beam method
- 1 July 1979
- journal article
- Published by Elsevier in Surface Science
- Vol. 86, 102-107
- https://doi.org/10.1016/0039-6028(79)90384-4
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Si Molecular Beam Epitaxy (n on n+) with Wide Range Doping ControlJournal of the Electrochemical Society, 1977
- Acceptor dopants in silicon molecular-beam epitaxyJournal of Applied Physics, 1977
- Three independent LEED studies of clean Si (100) surfacesJournal of Physics C: Solid State Physics, 1977
- Molecular beam epitaxyProgress in Solid State Chemistry, 1975
- Surface Debye temperature of the Si (001)-2 × 2 structureSurface Science, 1974
- Silicon homoepitaxial thin films via silane pyrolysis: A HEED and Auger electron spectroscopy studySurface Science, 1972
- A LEED STUDY OF THE HOMOEPITAXIAL GROWTH OF THICK SILICON FILMSApplied Physics Letters, 1967
- Observations of “Clean” Surfaces of Si, Ge, and GaAs by Low-Energy Electron DiffractionIBM Journal of Research and Development, 1965
- Structure and Adsorption Characteristics of Clean Surfaces of Germanium and SiliconThe Journal of Chemical Physics, 1959