Interpretation of capacitance-voltage characteristics on silicon-on-insulator (SOI) capacitors
- 1 January 1989
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 32 (1) , 65-68
- https://doi.org/10.1016/0038-1101(89)90049-x
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Determination of the fixed oxide charge and interface trap densities for buried oxide layers formed by oxygen implantationApplied Physics Letters, 1988
- Capacitance-voltage characteristics of Semiconductor-Insulator-Semiconductor (SIS) structureSolid-State Electronics, 1985
- Theory of the fully depleted SOS/MOS transistorSolid-State Electronics, 1980
- Effect of silicon film thickness on threshold voltage of SOS-MOSFETsSolid-State Electronics, 1979