Inversion-mode MOSFET's in polycrystalline Silicon thin films: Characterization and modeling

1 December 1987

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices

Vol. 34 (12) , 2439-2449
https://doi.org/10.1109/t-ed.1987.23333

Abstract

The performance of MOSFET's in LPCVD polysilicon is characterized. Specifically, the transistor I-V behavior, transconductance, channel mobility, and leakage current are discussed in detail. These observed device characteristics are quantitatively analyzed, based on polysilicon MOSFET theory presented herein. The model utilizes the concept of the effective doping level and is analytic, tractable, and analogous to conventional bulk silicon MOSFET theory. Additionally, the adverse role of the grain boundary for device performance and the effect of grain-boundary hydrogenation in increasing the ON/ OFF current ratio are described.

Keywords

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