High efficiency high-speed photodetection in a monolithically integratable InGaAs/InP MQW laser structure at 1.5 μm

4 February 1993

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 29 (3) , 271-272
https://doi.org/10.1049/el:19930185

Abstract

Time-resolved photocurrent measurements in a reverse biased InGaAs/InP ridge waveguide multiquantum well pin laser structure at 1.54 μm are reported. The pulse response of this monolithically integratable detector is ~150 ps FWHM with an internal quantum efficiency of ~100% at reverse bias voltages of ~5 V.

Keywords

PULSE RESPONSE
INTERNAL QUANTUM EFFICIENCY
HIGH-SPEED PHOTODETECTION
SEMICONDUCTORS
MQW LASER STRUCTURE
REVERSE BIAS VOLTAGES
5 V
1.5 TO 1.54 MICRON
TIME RESOLVED PHOTOCURRENT MEASUREMENTS
MULTIQUANTUM WELL PIN LASER STRUCTURE
100 PERCENT
MONOLITHICALLY INTEGRATABLE DETECTOR
RIDGE WAVEGUIDE LASER
INGAAS-INP
150 PS
REVERSE BIASED LASER
PHOTONIC CIRCUITS
LASERS AS PHOTODETECTORS