DENSITY OF STATES IN THE GAP OF a-As2Se3BY PHOTOCURRENT TRANSIENT SPECTROSCOPY

1 October 1981

journal article
Published by EDP Sciences in Le Journal de Physique Colloques

Vol. 42 (C4) , C4-559
https://doi.org/10.1051/jphyscol:19814121

Abstract

Dispersive photocurrent in a-As2Se3, for T>200K, provides a measure of the density of localized states near the mobility edge. The power law transients correspond to a density of states which is exponential, g(E)∝exp(-E/kTo), with To ~ 500K. Recent measurements below 200K show deviations from the high temperature behavior. Possible explanations are discussed

Keywords

GAP
PHOTOCURRENT TRANSIENT SPECTROSCOPY
AS2SE3BY PHOTOCURRENT TRANSIENT

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