Material and processing issues for the monolithic integration of microelectronics with surface-micromachined polysilicon sensors and actuators

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Abstract
The monolithic integration of micromechanical deviecs with their controlling electronics offers potential increases in performance as well as decreased cost for these devices. Analog devices has demonstrated the commercial viability of this integration by interleaving the micromechanical fabrication steps of an accelerometer with the microelectronic fabrication steps of its controlling electronics. Sandia's Microelectronics Development Laboratory has integrated the micromechanical and microelectronic processing sequences in a segregated fashion. In this CMOS-first, micromechanics-last approach, conventional aluminum metalization is replaced by tungsten metalization to allow the CMOS to withstand subsequent high-temperature processing during the micromechanical fabrication. This approach is a refinement of an approach originally developed at UC Berkeley. Specifically, the issues of yield, repeatability, and uniformity of the tungsten/CMOS approach are addressed. Also, material issues related to the development of high-temperature diffusion barriers, adhesion layers, and low-stress films are discussed. Processing and material issues associated with alternative approaches to this integration such as micromechanics-first, CMOS-last or the interleaved process are also discussed.© (1995) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.

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