2D numerical investigation of the impact of compositional grading on the performance of submicrometer Si-SiGe MOSFET's

This publication has 30 references indexed in Scilit:

• New technique for the characterization of Si/SiGe layers using heterostructure MOS capacitors
  Solid-State Electronics, 1994
• Electron transport properties of Si/SiGe heterostructures: Measurements and device implications
  Applied Physics Letters, 1993
• Temperature dependence of MOSFET substrate current
  IEEE Electron Device Letters, 1993
• MICROX-an all-silicon technology for monolithic microwave integrated circuits
  IEEE Electron Device Letters, 1993
• p-type Ge-channel MODFETs with high transconductance grown on Si substrates
  IEEE Electron Device Letters, 1993
• Optimal channel grading in p-type Si/SiGe metal oxide semiconductor field effect transistors (MOSFETs)
  Canadian Journal of Physics, 1992
• A numerical study of performance potential of Si/sub 1-x/Ge/sub x/ pseudomorphic heterojunction bipolar transistors
  IEEE Transactions on Electron Devices, 1992
• High performance GeSi quantum-well PMOS on SIMOX
  Published by Institute of Electrical and Electronics Engineers (IEEE) ,1992
• High electron mobility in modulation-doped Si/SiGe quantum well structures
  Applied Physics Letters, 1991
• Techniques for small-signal analysis of semiconductor devices
  IEEE Transactions on Electron Devices, 1985