Variable-energy positron-beam studies of SiO2/Si irradiated by ionizing radiation
- 8 August 1988
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 53 (6) , 473-475
- https://doi.org/10.1063/1.100616
Abstract
Variable‐energy positron‐beam studies have been carried out on Si with a 1.61 μm overlayer of SiO2 irradiated by x ray and γ ray up to the dose of 5×105 R. The Doppler broadening of annihilation photons was found to be strongly influenced by x‐ray irradiation, and the effect was extended homogeneously over the entire oxide layer. A trapping model which neglects positron diffusion effects was applied to the dependence of the line shape parameter S on incident positron energy.Keywords
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