Annealing behaviour of gamma-ray-induced electron traps in LEC n -InP
- 4 August 1983
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 19 (16) , 609-611
- https://doi.org/10.1049/el:19830415
Abstract
The annealing behaviour of a gamma-ray-induced dominant electron trap (Ec − 0.79 eV) in LEC undoped n-InP is studied by means of the DLTS technique. The isothermal annealing experiment shows it is a first-order process with an activation energy of 0.98 eV; this value is much smaller than those found in room-temperature-irradiated n-GaAs.Keywords
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