The current dependency of the output conductance of voltage-driven bipolar transistors
- 1 August 1977
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 12 (4) , 428-429
- https://doi.org/10.1109/jssc.1977.1050926
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Measurements of bandgap narrowing in Si bipolar transistorsSolid-State Electronics, 1976
- ‘Early-intercept voltage’: a parameter of voltage-driven b.j.t.sElectronics Letters, 1976
- Characterization and measurement of the base and emitter resistances of bipolar transistorsIEEE Journal of Solid-State Circuits, 1972
- Internal thermal feedback in four–poles especially in transistorsProceedings of the IEEE, 1964