Spin dependent trapping at a silicon grain boundary
- 31 August 1983
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 47 (6) , 423-425
- https://doi.org/10.1016/0038-1098(83)91060-8
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
- Plasma-hydrogenation effects on conductivity and electron spin resonance in undoped polycrystalline siliconJournal of Applied Physics, 1982
- Deuterium passivation of grain-boundary dangling bonds in silicon thin filmsApplied Physics Letters, 1982
- The dc voltage dependence of semiconductor grain-boundary resistanceJournal of Applied Physics, 1979
- Spin-dependent recombination in a silicon p-n junctionSolid State Communications, 1976
- Spin-Dependent Recombination on Silicon SurfacePhysical Review B, 1972