Spin-coated amorphous chalcogenide films
- 1 October 1982
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 53 (10) , 6979-6982
- https://doi.org/10.1063/1.330043
Abstract
Preliminary investigations have shown that a family of chalcogenides may be deposited in technologically useful thin film form by an inexpensive technique of spin deposition from solution. The materials which are amorphous and microstructure free retain many of the properties of the solute (e.g., As2S3, As2S2, As2Se3, As2Te3, or GeSe) from which they are prepared. Some of the materials have been demonstrated to be potentially useful for high resolution pattern replication in particular for microlithography.This publication has 40 references indexed in Scilit:
- Electric field dependent photodecomposition of a-As2Se3Solid State Communications, 1973
- A reversible optical change in the AsSeGe glassJournal of Non-Crystalline Solids, 1973
- Electric field enhanced phase separation and memory switching in amorphous arsenic triselenideJournal of Applied Physics, 1972
- Memory switching in amorphous arsenic triselenideJournal of Non-Crystalline Solids, 1972
- Optically Induced Reversible Change in Amorphous SemiconductorsJapanese Journal of Applied Physics, 1972
- Photodecomposition of Amorphous As2Se3 and As2S3Journal of Applied Physics, 1971
- Hologram Storage in Arsenic Trisulfide Thin FilmsApplied Physics Letters, 1971
- HOLOGRAPHIC OPTICAL MEMORY An Optical Read–Write Mass MemoryApplied Optics, 1970
- Optically Formed Dielectric Gratings in Thick Films of Arsenic–Sulfur GlassApplied Optics, 1970
- Promise of Optical MemoriesJournal of Applied Physics, 1970