Gauge invariance in the theory of hopping magnetoresistance in semiconductors
- 1 December 1971
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 9 (23) , 2081-2084
- https://doi.org/10.1016/0038-1098(71)90365-6
Abstract
No abstract availableKeywords
This publication has 17 references indexed in Scilit:
- Magnetically Induced Spin-Reversal Transitions in Impurity Hop Conduction in-Type GermaniumPhysical Review B, 1968
- Hop-Conduction Magnetoresistance in-Type GermaniumPhysical Review B, 1967
- Low-Temperature Magnetoresistance of-Type Germanium Doped with Small and Intermediate Concentrations of PhosphorusPhysical Review B, 1967
- Spin reversal transitions in impurity hop conductionPhysics Letters A, 1967
- Magnetoresistance of-Type Germanium in the Phonon-Assisted Hopping Conduction Range at High Magnetic FieldsPhysical Review B, 1966
- Hall Coefficient and Resistivity in the Intermediate Impurity Conduction of n-Type GermaniumJournal of the Physics Society Japan, 1965
- Effects of the Magnetic Field on the Intermediate Impurity Conduction in n-Type GermaniumJournal of the Physics Society Japan, 1963
- Magnetoresistance in the Impurity Conduction of n-type GermaniumJournal of the Physics Society Japan, 1962
- Galvanomagnetic Effects in-Ge in the Impurity Conduction RangePhysical Review B, 1961
- Effect of a magnetic field on donor impurity levels in InSbJournal of Physics and Chemistry of Solids, 1956