Magnetotransport and magnetization properties of p-type , a new III - V diluted magnetic semiconductor

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Abstract
A new III - V diluted magnetic semiconductor (DMS), , can be grown by molecular beam epitaxy. When a low temperature growth procedure is followed, homogeneous material of excellent crystal quality with Mn concentrations up to can be grown. Hole transport in these compounds is strongly affected by the antiferromagnetic exchange interaction between holes and Mn 3d spins. At a critical temperature , with a value of around 50 K for Mn concentrations of 3 - 5%, magnetic long-range order of Mn - hole complexes induces a paramagnetic - ferromagnetic transition. Above , it is shown that transport behaviour on both sides of the metal - insulator transition can be observed. Below , due to the rising spontaneous magnetization, carrier mobility increases and the relative position of the Fermi level towards the mobility edge changes. Also, a negative magnetoresistance is measured.