Identification of an ionized-donor-bound-exciton transition in GaN
- 30 September 1997
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 103 (9) , 533-535
- https://doi.org/10.1016/s0038-1098(97)00231-7
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
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- Shallow donors in GaN—The binding energy and the electron effective massSolid State Communications, 1995
- Acceptor binding energy in GaN and related alloysSemiconductor Science and Technology, 1995
- Optical Properties of Bound Exciton Complexes in Cadmium SulfidePhysical Review B, 1962