Trap-limited hydrogen diffusion in doped silicon
- 15 January 1990
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 41 (2) , 1054-1058
- https://doi.org/10.1103/physrevb.41.1054
Abstract
Hydrogen depth profiles in highly doped p-type silicon are obtained from the analysis of infrared reflectance spectra of H-passivated samples. From these profiles, H-diffusion coefficients are calculated for different temperatures and dopant concentrations. The results are explained with the assumption that hydrogen diffusion is limited by trapping at the acceptor sites. A binding energy of 0.6 eV is found for B-H complexes, in agreement with previous ab initio calculations.Keywords
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