Flux Dependence of Amorphous Layer Formation and Damage Annealing in Room Temperature Implantation of Boron into Silicon
- 1 January 1993
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
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- The formation of a continuous amorphous layer by room-temperature implantation of boron into siliconJournal of Applied Physics, 1988
- A systematic analysis of defects in ion-implanted siliconApplied Physics A, 1988
- Ionization, thermal, and flux dependences of implantation disorder in siliconRadiation Effects, 1971
- Spatial distribution of energy deposited into atomic processes in ion-implanted siliconRadiation Effects, 1970