I n s i t u grown-in selective contacts to n-i-p-i doping superlattice crystals using molecular beam epitaxial growth through a shadow mask
- 22 September 1986
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 49 (12) , 704-706
- https://doi.org/10.1063/1.97573
Abstract
Highly selective n‐ and p‐type contacts to GaAs doping superlattices have been achieved by using molecular beam epitaxial growth through a silicon shadow mask to form interdigital grown‐in contacts. Low contact resistance, excellent diode characteristics, and efficient lateral injection electroluminescence are obtained.Keywords
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