Doping inhomogeneities in silicon observed by a high-resolution electroreflectance technique
- 16 August 1972
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 12 (2) , 663-670
- https://doi.org/10.1002/pssa.2210120240
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Direct Verification of the Third-Derivative Nature of Electroreflectance SpectraPhysical Review Letters, 1972
- Electrical properties of melt-grown silicon monoarsenideSolid-State Electronics, 1971
- Specific resistance of n+ -njunctionSolid-State Electronics, 1971
- Scanned Laser Infrared MicroscopeApplied Optics, 1970
- Resistivity Inhomogeneities in Silicon CrystalsJournal of the Electrochemical Society, 1967