Ar Ion Laser-Assisted Metalorganic Molecular Beam Epitaxy of InP

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Abstract
Selective growth of InP by Ar ion laser-assisted metalorganic molecular beam epitaxy is reported. Trimethylindium (TMI) and triethylindium (TEI) are used as a group III source gas. Growth rate enhancement by laser irradiation occurs in the substrate temperature range of 350–480°C when TMI is used, but does not occur when TEI is used. The beam flux response time of TMI is less than 0.5 seconds, while that of TEI is as long as 30 seconds. Therefore, TMI is suitable for the selective growth of InP. It is found for the InP film using TMI that the carbon concentration of the laser-irradiated area is less than one third that of the nonirradiated area. Also, the mechanism involved in the reduction of carbon incorporation by laser irradiation is discussed.