Electronic magnetostriction of Bi1-xSbxalloys
- 20 November 1985
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 18 (32) , 6033-6042
- https://doi.org/10.1088/0022-3719/18/32/014
Abstract
The magnetostriction of Bi1-xSbx narrow-gap semimetals and semiconductors has been measured at 4.2K as a function of magnetic field for values of x<10 at.%. The field-induced strain is due to the change in the free carrier densities and energies, in turn due to the Landau level quantisation: the crystal size changes to minimise the sum of the elastic and electronic free energies. A quantitative model, involving a compilation of the literature on the band structure of these alloys, is developed and compared with the authors' data.Keywords
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