A high density NAND EEPROM with block-page programming for microcomputer applications
- 1 January 1989
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 10.1/1-10.1/4
- https://doi.org/10.1109/cicc.1989.56726
Abstract
A 5 V-only 4 Mb NAND EEPROM (electrically erasable programmable read-only memory) has been successfully developed. The EEPROM has on-chip high-voltage generators, so the system needs only a 5 V power supply. The block-page erase/program mode realizes high-speed programming. On-chip test circuits provide high reliability. The NAND EEPROM has many applications for compact microcomputer systems, which need large storage systems with low power consumptionKeywords
This publication has 1 reference indexed in Scilit:
- An experimental 4 Mb CMOS EEPROM with a NAND structured cellPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003