Single-carrier space-charge controlled conduction vs. ballistic transport in GaAs devices at 77° K

1 August 1981

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters

Vol. 2 (8) , 205-207
https://doi.org/10.1109/EDL.1981.25403

Abstract

Single-carrier space-charge controlled in n+n n+GaAs structures at 77°K have been studied. The calculated current-voltage relationships are compared with the ones obtained from the "ballistic" transport theory.

Keywords

BALLISTIC TRANSPORT
GALLIUM ARSENIDE
ELECTRONS
PHOTOVOLTAIC CELLS
GLASS
PHYSICS
COSTS
WAVELENGTH CONVERSION
REFLECTION
III-V SEMICONDUCTOR MATERIALS

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