A novel cap-annealing technique using a WN/sub x/ film as a capsulant in the refractory gate self-aligned GaAs MESFET fabrication process
- 1 November 1988
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 35 (11) , 1989-1991
- https://doi.org/10.1109/16.7415
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- Annealing behavior of implanted Si in semi-insulating GaAs in the presence of stressJournal of Applied Physics, 1987
- Orientation effect of self-aligned source/drain planar GaAs Schottky barrier field-effect transistorsApplied Physics Letters, 1983