On depth profiling an InGaAsP‐InP heterojunction
- 1 February 1983
- journal article
- Published by Wiley in Surface and Interface Analysis
- Vol. 5 (1) , 2-3
- https://doi.org/10.1002/sia.740050103
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Three-layer 1.3 µm In1-xGaxAsyP1-ylasers with quaternary confining layersIEEE Journal of Quantum Electronics, 1981
- Depth resolution degradation of sputter-profiled InP/InxGa1−xAsyP1−y interfaces caused by cone formationApplied Physics Letters, 1980
- Auger profile study of the influence of lattice mismatch on the LPE InGaAsP-InP heterojunction interfaceApplied Physics Letters, 1979
- Interface studies of AlxGa1−xAs-GaAs heterojunctionsJournal of Applied Physics, 1979
- Auger depth profiling of interfaces in MOS and MNOS structuresJournal of Vacuum Science and Technology, 1976