Measurements of Grain Boundary Trap Density and Hydrogen Diffusivity in Polycrystalline Silicon Fet's
- 1 January 1990
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 18 references indexed in Scilit:
- Development and electrical properties of undoped polycrystalline silicon thin-film transistorsIEEE Transactions on Electron Devices, 1989
- Effects of trap-state density reduction by plasma hydrogenation in low-temperature polysilicon TFTIEEE Electron Device Letters, 1989
- A study of hydrogen passivation of grain boundaries in polysilicon thin-film transistorsIEEE Transactions on Electron Devices, 1989
- Hydrogen passivation of PolySilicon MOSFET's from a plasma Nitride sourceIEEE Electron Device Letters, 1984
- Hydrogen diffusion along passivated grain boundaries in silicon ribbonApplied Physics Letters, 1984
- Conductivity behavior in polycrystalline semiconductor thin film transistorsJournal of Applied Physics, 1982
- Studies of the hydrogen passivation of silicon grain boundariesJournal of Applied Physics, 1981
- Transport properties of polycrystalline silicon filmsJournal of Applied Physics, 1978
- The electrical properties of polycrystalline silicon filmsJournal of Applied Physics, 1975
- Field-effects in polycrystalline-silicon filmsSolid-State Electronics, 1972