A four-level-metal fully planarized interconnect technology for dense high performance logic and SRAM applications
- 9 December 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Submicron wiring technology with tungsten and planarizationPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Metal-voiding phenomenon in aluminum and its alloysPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Electromigration in a two-level Al-Cu interconnection with W studsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002