Evidence of an energetic ion bombardment mechanism for bias-enhanced nucleation of diamond

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Abstract
The effect of substrate bias voltage was investigated for bias-enhanced diamond nucleation pretreatments of diamond thin films in a microwave plasma chemical vapor deposition reactor. A critical bias voltage of approximately −200 V was observed for nucleation density enhancement from ∼104 cm−2 to ∼1010 cm−2. Furthermore, the nucleation density under bias conditions was five orders of magnitude lower for a small silicon region electrically isolated from the otherwise negatively biased silicon substrate. These results confirm that bombardment of the substrate by energetic cations plays a significant role in the diamond nucleation mechanism during bias pretreatments.

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