MBE growth of HgCdTe avalanche photodiode structures for low-noise 1.55μm photodetection
- 1 May 1999
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 201-202, 980-984
- https://doi.org/10.1016/s0022-0248(98)01506-1
Abstract
No abstract availableThis publication has 10 references indexed in Scilit:
- MBE-grown HgCdTe multi-layer heterojunction structures for high speed low-noise 1.3–1.6 µm avalanche photodetectorsJournal of Electronic Materials, 1997
- Molecular beam epitaxial growth and properties of short-wave infrared Hg0.3Cd0.7Te filmsJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1996
- Hg/sub 0.4/Cd/sub 0.6/Te 1.55- mu m avalanche photodiode noise analysis in the vicinity of resonant impact ionization connected with the spin-orbit split-off bandIEEE Transactions on Electron Devices, 1988
- Impact ionization resonance and auger recombination in Hg1 - xCdxTe (0.6 ≤ x ≤ 0.7)IEEE Journal of Quantum Electronics, 1987
- The semiconductor-electrolyte junction: Surface and bulk properties of Hg1−xCdxTe (0.6 ⩽ x ⩽ 1)Journal of Crystal Growth, 1985
- Energy gap versus alloy composition and temperature in Hg1−xCdxTeJournal of Applied Physics, 1982
- Bandgap spin-orbit splitting resonance effects in Hg1-xCdxTe alloysJournal of Crystal Growth, 1982
- Ga1-xAlxSb avalanche photodiodes: Resonant impact ionization with very high ratio of ionization coefficientsIEEE Journal of Quantum Electronics, 1981
- Resonant enhancement of impact in Ga1−xAlxSbApplied Physics Letters, 1980
- Temperature dependance of the fundamental absorption edge in CdTeSolid State Communications, 1973