The growth of low dislocation density Sr1−x, Bax Nb2O6 crystals
- 1 August 1976
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 5 (4) , 415-426
- https://doi.org/10.1007/bf02663368
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Preparation and physical properties of lanthanum-modified Srl-xBaxNb2O6, ferroelectric crystalsJournal of Electronic Materials, 1975
- Rare-earth-modified Sr0.5Ba0.5Nb2O6, ferroelectric crystals and their applications as infrared detectorsJournal of Electronic Materials, 1975
- Dislocation etch pits in strontium–barium niobatePhysica Status Solidi (a), 1974
- Preparations and properties of low loss Sr1−xBaxNb2O6 ferroelectric single crystalsJournal of Electronic Materials, 1973
- ELECTRO-OPTIC COEFFICIENTS OF FERROELECTRIC STRONTIUM BARIUM NIOBATEApplied Physics Letters, 1967