Highly packed InGaAs quantum dots on GaAs(311)B
- 2 December 1998
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 73 (23) , 3411-3413
- https://doi.org/10.1063/1.122781
Abstract
We have fabricated highly packed and ordered quantum dots (QDs) array on GaAs(311)B substrate without coalescence of QDs. Reflection high-energy electron diffraction and Auger spectra suggest the inhomogeneous distribution of In and Ga in QD. In concentration near the surface of QD is larger than that of the inside, and the inhomogeneous distribution of In and Ga in QDs prevents QDs from merging.
Keywords
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