Abstract
A planar monolithic diode mixer that achieves 5-10-dB conversion loss and very low distortion and spurious responses over a 26-40-GHz RF and local oscillator (LO) bandwidth and DC-10-GHz IF is described. The diodes are the gate-to-channel junctions of 0.2- mu m*80- mu m InGaAs HEMTs, and the baluns are Marchand-like coplanar structures.> Author(s) Maas, S.A. Nonlinear Consulting, Long Beach, CA, USA Chang, K.W.

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