Identity between spreading and noise diffusion coefficients for hot carriers in semiconductors
- 15 May 1978
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 32 (10) , 671-673
- https://doi.org/10.1063/1.89850
Abstract
It is proved that the three diffusion coefficients, related to noise, spreading of a bunch of carriers, and gradient of concentration, are identical. This demonstrates in the hot carrier regime the validity of the relation kTn(E)/q=D (E)(dvd(E)/dE)−1 which is an extension of the Ohmic Einstein relation (Tn is the noise temperature, D is the diffusion coefficient, vd is the drift velocity). Therefore the noise and time‐of‐flight techniques appear as being two ways which are quite different, leading to the same diffusion coefficient.Keywords
This publication has 14 references indexed in Scilit:
- Differential relaxation times and diffusivities of hot carriers in isotropic semiconductorsJournal of Applied Physics, 1977
- Mobility, Noise Temperature, and Diffusivity of Hot Holes in GermaniumPhysical Review B, 1973
- Noise calculation by the impedance-field method: Application to single injectionPhysica Status Solidi (a), 1973
- Noise Temperature and the Spectral Density of Hot Carrier Velocity Flutuations in SemiconductorsPhysica Status Solidi (b), 1973
- High-field current fluctuations in n-type germaniumCanadian Journal of Physics, 1970
- New Hot-Electron Negative Resistance EffectPhysical Review B, 1963
- Noise Temperature of Hot Electrons in GermaniumPhysical Review Letters, 1962
- Noise Theory for Hot ElectronsIBM Journal of Research and Development, 1959
- Statistical-Mechanical Theory of Irreversible Processes. I. General Theory and Simple Applications to Magnetic and Conduction ProblemsJournal of the Physics Society Japan, 1957
- Irreversibility and Generalized NoisePhysical Review B, 1951